Molecular dynamics simulations of silicon wafer bonding
نویسندگان
چکیده
منابع مشابه
Hydrophobic silicon wafer bonding
Wafers prepared by an HF dip without a subsequent water rinse were bonded at room temperature and annealed at temperatures up to 1100 “C. Based on substantial differences between bonded hydrophilic and hydrophobic Si wafer pairs in the changes of the interface energy with respect to temperature, secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), we suggest that h...
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ژورنال
عنوان ژورنال: Applied Physics A Materials Science & Processing
سال: 1996
ISSN: 0947-8396,1432-0630
DOI: 10.1007/bf01568080